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Samsung Unveils Solid State Drives Using Its New 3-Bit V-NAND Storage Technology

by Farhan
December 9, 2014
SSD 850EVO 1
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SSD_850EVO-6

Samsung has announced the 850 EVO solid state drive, which will be the first storage device to use the company’s new 3-Bit V-NAND storage technology. It will provide a boost in storage and endurance, and will be launched in 53 countries later this month.

The V-NAND technology allows Samsung to stack cell arrays vertically, increasing the amount of storage space that is available in the same space. V-NAND itself was first introduced by Samsung back in 2013; at that time cell arrays were arranged in stacks of 24-layers. The company has managed to improved on the system and the new 850 EVO will features 32-layer cell arrays.

SSD_850EVO-1

What is new about the technology is the 3-bit-per-cell, that allows for Samsung to produce the NAND storage more efficiently. In theory, this should help control the price of the SSD and allow for lower prices at the same storage capacities. However, Samsung has not yet revealed any details about pricing on the storage devices so this is still left to speculation.

The Samsung 850 EVO will come in 1TB, 500GB, 250GB and 120GB capacity options. It is also rated to last for five years at 80GB of data written per day. This is, in theory, a whole lot more than most consumers will subject the SSD to on a daily basis.

[Source: Samsung Tomorrow]

Related Article Leaked Renders Reveal Samsung Galaxy Glasses Design
Filed Under Flash StorageSamsungSamsung SSDSSDstorageV-NAND
Updated 2:38 pm, Tue, 9 December 14
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