SK Hynix recently announced that it has developed a new 8GB DDR4 RAM module, based on its latest 10nm-class, or 1Ynm technology. According to TechPowerUp, the new memory is reportedly 20% faster than standard DDR4 memory, and even boasts a reduction of 15% in power consumption. Compared to the previous 1Xnm memory technology.
Additionally, the new 1Ynm memory format also supports data transfer speeds of up to 3200Mbps, and also adopted what it calls a “4 Phase Clocking” method. Doubling the clockspeeds that in turn, boosts data transfer speeds and stability. The new memory module also features a new transistor structure, which makes SK Hynix says lowers the possibility of data errors.
![SK Hynix Creates 8GB DDR4 RAM Module Based On 10nm-Class Technology 2 SK hynix factory](https://www.lowyat.net/wp-content/uploads/2018/11/SK-hynix-factory.jpg)
SK Hynix has said that it first intends to introduce the new 1Ynm memory module technology to the Server and PC market segment. Followed by the possibility of creating a more mobile-friendly variant of the memory module. At the time of writing, there’s no indication when that time is.
(Source: TechPowerUp)
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