A couple of months ago, we wrote an article regarding Samsung Electronics’ plan to increase the production of its DRAM units. The company has recently made an official announcement regarding this matter, and it has also provided more info regarding the specifications of its new DRAM unit as well.
Samsung Electronics’ new DRAM unit is said to be the world’s first 2nd generation 10nm 8-gigabit DDR4 RAM. What makes Samsung’s DRAM rather “special” is the fact that it comes with improvements such as: smaller dimensions, 10% to 15% improvements in performance and efficiency, along with faster speed of operation as well (3.6Mbps).
Interestingly, Samsung Electronics has also mentioned that aside from mass producing the new 2nd Gen DRAM unit, it will also be increasing the overall production of its existing 1st generation 10nm DRAMs as well to accommodate the ever increasing demands from consumers. The company stated that the improvements in its DRAM production is possible due to usage of “new technologies” – specific details were not given.
The advancements in Samsung Electronics’ DRAM production also allows the company to accelerate the introduction of its next generation chips as well. These include DDR5, HBM3, LPDDR5, and GDDR6 – the later memory controller may likely be used in 2018 / 2019 graphics cards. Speaking of which, it’ll be interesting to see the type of improvements Samsung’s next generation memory controllers will bring onto future graphics cards.
Regardless, Samsung Electronics’ announcement will indeed benefit us consumers greatly over the next few months, because an increase in production usually leads to higher stock availability and most importantly, reduction in price.