Update 20 January 2022 (2:24PM): SK Hynix reached out to us over some technical inaccuracies. According to the company, the HBM3 memory that is set to be introduced at ISSCC 2022 is the same memory that was announced last October, and that the 896GB/s is a different “standard of performance indication”. The second inaccuracy relates to the 27Gbps GDDR6. We initially wrote that it was SK Hynix that was going to be speaking about it, when it is, in fact, Samsung. These errors have been rectified in the original article.
Original article below:
SK Hynix, the South Korean memory manufacturer, is now expected to reveal, as well as speak at length about its latest and faster HBM3 memory standard. The memory is technically the same 12-Hi HBM3 memory that was announced last year, and while it is reportedly capable of achieving speeds of up to 896GB/s, SK Hynix says that that number is merely a different “standard of performance indication”.
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Details about the new memory is still scarce but what is confirmed is that the presentation and Q&A sessions are set to be held during the International Solid-State Circuits Conference (ISSCC) that is scheduled to take place from 20 February until 24 February next month. Like its predecessor, the new HBM3 memory is expected to be a 12-layer DRM, with a capacity of 196Gb or 24GB. How this is achieved is through a process called Through Silicon Via (TSV) auto-calibration and machine-learning optimisations.
In addition to the new ultra-fast HBM3 memory, Samsung is also planning on speaking about its new T-Coil 27Gbps GDDR6 memory. Naturally, that would make it faster than Samsung’s own GDDR6 memory, which currently runs at 24Gbps and is currently being sampled.
(Source: ISSCC Advance Program, Videocardz)
