Samsung Electronics has announced that it has begun production of 256GB embedded memory chips based on the Universal Flash Storage (UFS) 2.0 standard. This chips will double the maximum amount of storage available on mobile devices, although it may be a while before we see them on the market.
Samsung claims that the new 256GB memory is nearly twice as fast as a SATA SSD for PCs. This memory has dual data transfer lanes, and can move data at speeds of 850MB/s. It also has a sequential writing speed of 260MB/s.
The company looks to be fully leveraging its V-NAND manufacturing process, which allows it to build higher capacity storage without increasing the size of the chips. This works by stacking cell arrays on top of each other to form a 3D shape. Samsung introduced 128GB embedded storage for mobile devices last year using this same technology, and it looks like the company has managed to reduce the cost of producing even higher storage for the mass market.
Unfortunately, this announcement comes just after the announcement of the Samsung Galaxy S7; which means that we will have to wait until next year before we see this massive amount of storage on the company’s flagship device.