Samsung announced second generation DRAM modules that will be more power-efficient and also slimmer compared to their predecessor. Built on the 10-nanometre manufacturing process, the LPDDR4X (Low Power, Double Data Rate, 4X) DRAM is set to be used in Samsung’s future mobile devices.
The company claims up to 10% in power consumption reduction when compared to last year’s model, so users can expect a little bit more battery at the end of the day. This is while maintaining the same 4.3Gb/s transfer speed.
“The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019,” said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics.
At the same time, Samsung has managed to create thinner 8GB DRAM modules by stacking four new 16Gb chips in one stack (16Gb = 2GB), delivering 34GB/s transfer speeds between chips while reducing the physical size of the memory by 20%.
We should be seeing this new chips by early 2019, presumably in Samsung’s own devices first like the Samsung Galaxy S10. We may also see these chips in future flagship devices from other companies as well.
(Source: Samsung)
