Samsung Electronics has announced that it has begun mass producing the world’s first 10nm DDR4 RAM. The South Korean manufacturing powerhouse claims that its recent breakthrough in terms of DRAM scaling will contribute to faster and more efficient portable computers in the future.
With the smaller 10nm DDR4 RAM, Samsung is able to create a more power efficient and faster DRR4 memory compared to the 20nm process used in older DDR4 memory. In addition to that, Samsung claims that its new 10nm DRAM will be able to churn out up to 3,200Mbps of data transfer rate, which is 30% faster compared to 20nm DRAMs (2,400Mbps).
Meanwhile, power consumption has improved by 20% as well. According to Samsung, its 10nm DDR4 RAM will be produced in capacities ranging from 4GB up to 128GB. Interestingly, Samsung has also mentioned that it may be introducing a 10nm “mobile-class” DRAM for its upcoming smartphones as well.
Like CPUs and GPUs, it seems that RAM dies are also shrinking over time, which isn’t necessarily a bad thing. Smaller dies allow for efficient computing along with introduction of newer technologies that wasn’t possible before (HBM2 for example). Unfortunately, Samsung hasn’t mention when its 10nm DDR4 RAM will be made availble for consumers yet.