The first batch of DDR6 memory are expected to make their commercial debut in 2027. Supposedly, many of the major memory makers are done with prototype designs and have shifted their focus to controller development.
According to the Taiwan-based publication, Commercial Times, the list of memory makers include Samsung, micron, and SK Hynix, all of whom are reportedly working with Intel and AMD on interface testing, and platform validation is expected to begin in 2026. In terms of performance, DDR6 is expected to run at speeds of up to 17,600MT/s, far more than the official top speeds offered by DDR5.
DDR6 will also tout some upgrades to its multi-channel architecture as well, featuring four 24-bit sub-channels. Namely, improved parallel processing, data flow, and bandwidth efficiency, compared to the dual 32-bit layout of DDR5.
For context, the highest speeds that the current DDR5 memory standard any memory maker has managed to hit is 10,000MT/s (looking at you, G.Skill). There is a catch here, though: it was achieved using the CAMM2 form factor, and not the standard DIMMs or SO-DIMMs form factor. Speaking of which, CAMM2 may be the form factor of choice for manufacturers, given how much more efficient the form factor is, along with the improved performance and higher capacity it supports on a single module. Which is ideal for laptops and other compact devices.
On that note, other companies, including Qualcomm, MediaTek, and Synopsys, have also begun development for LPDDR6 on their hardware.
(Source: Techspot, Commercial Times)
